IEEE

Compute SNDR-Boosted 22-nm MRAM-Based In-Memory Computing Macro Using Statistical Error Compensation

Abstract: The accuracy of embedded non-volatile memory (eNVM) in-memory computing (IMC) designs is primarily limited by analog non-idealities. This article introduces a magnetoresistive random-access ...
IEEE

3-D Vertical Resistive Switching Random Access Memory (3D-VRRAM) With Multilevel Programming for High-Density, Energy-Efficient In-Memory Computing

Abstract: Resistive random access memory (RRAM) devices offer a broad range of attractive properties for in-memory computing (IMC) applications, such as nonvolatile storage, low read current, and high ...